PART |
Description |
Maker |
WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Cypress Semiconductor
|
MC68450 |
Direct Memory Access Controller
|
Motorola, Inc
|
MC68440 |
Dual-Channel Direct Memory Access Controller
|
Motorola, Inc
|
TMPZ84C10AM-6 TMPZ84C10AP-6 TMPZ84C10AT-6 |
CMOS-Z80 DMA : DIRECT MEMORY ACCESS CONTROLLER
|
TOSHIBA[Toshiba Semiconductor]
|
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262, 144-Word x 16-Bit Dynamic Random Access Memory x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor] ITT, Corp.
|
UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Silicon NPN epitaxial planar type
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
|
List of Unclassifed Man... List of Unclassifed Manufacturers N.A. Unisonic Technologies ETC[ETC] Electronic Theatre Controls, Inc.
|
SI3068 SI3068-B-FS |
FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories Inc.
|
AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory 120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory 100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory 65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
MDT10P257P11 |
8-bit micro-controlle
|
Micon Design Technology...
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